Pascal and Francis Bibliographic Databases

Help

Search results

Your search

au.\*:("BAILBE JP")

Results 1 to 10 of 10

  • Page / 1
Export

Selection :

  • and

CONTRIBUTION A L'ETUDE PHYSIQUE DES TRANSISTORS BIPOLAIRES.BAILBE JP.1977; ; S.L.; DA. 1977; PP. 1-245; BIBL. 4 P. 1/2; (THESE DOCT. SCI., SPEC. ELECTRON.; PAUL SABATIER TOULOUSE)Thesis

SOME ASPECTS OF CURRENT GRAIN VARIATIONS IN BIPOLAR TRANSISTORS.REY G; BAILBE JP.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 10; PP. 1045-1057; ABS. FR.; BIBL. 14 REF.Article

ETABLISSEMENT D'UN MODELE DE PHOTOTRANSISTOR.MARTY A; BAILBE JP.1977; ONDE ELECTR.; FR.; DA. 1977; VOL. 57; NO 5; PP. 365-372; ABS. ANGL.; BIBL. 11 REF.Article

MODELE ANALYTIQUE COMPACT D'UNE HETEROJONCTION ISOTYPE GAALAS/GAASMARTY A; BAILBE JP; REY G et al.1982; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1982; VOL. 17; NO 8; PP. 453-464; ABS. ENG; BIBL. 16 REF.Article

A UNIFIED APPROACH TO THE BASE WIDENING MECHANISMS IN BIPOLAR TRANSISTORS.REY G; DUPUY F; BAILBE JP et al.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 10; PP. 863-866; BIBL. 8 REF.Article

ELECTRICAL BEHAVIOR OF AN NPN GAA1AS/GAAS HETEROJUNCTION TRANSISTORMARTY A; REY G; BAILBE JP et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 6; PP. 549-557; BIBL. 13 REF.Article

DESIGN AND FABRICATION OF HIGH-SPEED GAALAS/GAAS HETEROJUNCTION TRANSISTORSBAILBE JP; MARTY A; PHAMHUUHIEP et al.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 6; PP. 1160-1164; BIBL. 12 REF.Article

BASE WIDENING INTO THE EMITTER REGION OF AN N+NPN BIPOLAR TRANSISTOR.REY G; BAILBE JP; MARTY A et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 6; PP. 545-550; BIBL. 3 REF.Article

SUR LE COMPORTEMENT HAUTE FREQUENCE DES TRANSISTORS BIPOLAIRES.REY G; MUNOZ YAGUE A; BAILBE JP et al.1975; ONDE ELECTR.; FR.; DA. 1975; VOL. 55; NO 2; PP. 485-490; ABS. ANGL.; BIBL. 6 REF.Article

TWO-DIMENSIONAL FINITE-ELEMENT SIMULATION OF A PERMEABLE-BASE TRANSISTORMARTY A; CLARAC J; BAILBE JP et al.1983; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1983; VOL. 130; NO 1; PP. 24-28; BIBL. 5 REF.Article

  • Page / 1